Effect of voltage divider layer on self-current compliance resistive switching in Ta/TaOx/ITO structure with an ultra-low power consumption-Reference-Cited by-同舟云学术

Effect of voltage divider layer on self-current compliance resistive switching in Ta/TaOx/ITO structure with an ultra-low power consumption

Published:2021-01-25 Issue:4 Volume:118 Page:042103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhao Jinshi¹,Guo Shuqin¹,Li Jiacheng¹,Li Yingchen¹,Zhou Liwei¹^ORCID

Affiliation:

1. Tianjin Key Laboratory of Film Electronic and Communication Devices, School of Electrical and Electronic Engineering, Tianjin University of Technology, No. 391, Bin Shui Xi Dao Road, Xiqing District, Tianjin 300384, China

Funder

Major Project of Tianjin Science and Technology

Leading academic talents in Tianjin

Natural Science Foundation of Tianjin City

National Natural Science Foundation of China

The innovative talents promotion plan in Tianjin

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0036730

Reference30 articles.

1. Opportunity of Spinel Ferrite Materials in Nonvolatile Memory Device Applications Based on Their Resistive Switching Performances

2. Memristive devices for computing

3. A Low‐Current and Analog Memristor with Ru as Mobile Species

4. Flexible All-Inorganic Perovskite CsPbBr3 Nonvolatile Memory Device

5. A physical model of switching dynamics in tantalum oxide memristive devices

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