Low‐power deposition of fluorinated microcrystalline silicon hydrogen alloy films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.343432
Reference14 articles.
1. Electrical and Structural Properties of Phosphorous-Doped Glow-Discharge Si:F:H and Si:H Films
2. Properties of polycrystalline silicon prepared by chemical transport in hydrogen plasma at temperatures between 80 and 400 degrees C
3. Low‐temperature crystallization of dopeda‐Si:H alloys
4. Degradation of tin‐doped indium‐oxide film in hydrogen and argon plasma
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1. Research on the optimum hydrogenated silicon thin films for application in solar cells;Chinese Physics;2006-11-02
2. Mechanisms for deposition and etching in fluorosilane plasma processing of silicon;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2003-09
3. Correlation between structural and transport properties of silicon thin films deposited at various substrate temperatures;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2003
4. Power density in RF PECVD: a factor for deposition of amorphous silicon thin films and successive solid phase crystallization;Journal of Physics D: Applied Physics;2002-08-19
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