Elastic theory for strained heterostructures with in-plane anisotropy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2977673
Reference21 articles.
1. Uniaxial-process-induced strained-Si: extending the CMOS roadmap
2. High-Performance Uniaxially Strained SiGe-on-Insulator pMOSFETs Fabricated by Lateral-Strain-Relaxation Technique
3. Characterization of in-plane strain relaxation in strained layers using a newly developed plane nano-beam electron diffraction (plane-NBD) method
4. Determination of the lattice constant of epitaxial layers of III-V compounds
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3. Growth of strained Si/relaxed SiGe heterostructures on Si(110) substrates using solid-source molecular beam epitaxy;Semiconductor Science and Technology;2017-09-29
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