Characterization of in-plane strain relaxation in strained layers using a newly developed plane nano-beam electron diffraction (plane-NBD) method-Reference-Cited by-同舟云学术

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Characterization of in-plane strain relaxation in strained layers using a newly developed plane nano-beam electron diffraction (plane-NBD) method

Published:2006-12-08 Issue:1 Volume:22 Page:S227-S230
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Usuda K,Irisawa T,Numata T,Hirashita N,Takagi S

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference6 articles.

1. Strain characterization in SOI and strained-Si on SGOI MOSFET channel using nano-beam electron diffraction (NBD)

2. Dislocation-free relaxed SiGe-on-insulator mesa structures fabricated by high-temperature oxidation

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1. Local anisotropic strain evaluation in thin Ge epitaxial film using SiGe stressor template grown on Ge substrate by selective ion implantation;Japanese Journal of Applied Physics;2017-10-24

2. Pattern-dependent anisotropic stress evaluation in SiGe epitaxially grown on a Si substrate with selective Ar+ion implantation using oil-immersion Raman spectroscopy;Japanese Journal of Applied Physics;2017-04-03

3. Modeling and estimation of process-induced stress in the nanowire field-effect-transistors (NW-FETs) on Insulator-on-Silicon substrates with high-k gate-dielectrics;Superlattices and Microstructures;2016-10

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5. Tensor Evaluation of Stress Relaxation Profile in Strained SiGe Nanostructures on Si Substrate;ECS Transactions;2013-05-03

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