Performance limits of vertical GaN of conventional doped pn and natural polarization superjunction devices
Author:
Affiliation:
1. Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180, USA
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5109389
Reference24 articles.
1. Theory of Semiconductor Superjunction Devices
2. Performance Limits of Vertical 4H-SiC and 2H-GaN Superjunction Devices
3. True Material Limit of Power Devices—Applied to 2-D Superjunction MOSFET
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