The effect of boron implant energy on transient enhanced diffusion in silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.364022
Reference17 articles.
1. Characterization of ultra-shallow p/sup +/-n junction diodes fabricated by 500-eV boron-ion implantation
2. Rapid thermal annealing of boron‐implanted silicon using an ultrahigh power arc lamp
3. Rapid annealing and the anomalous diffusion of ion implanted boron into silicon
4. Transient boron diffusion in ion‐implanted crystalline and amorphous silicon
5. Implantation damage and anomalous diffusion of implanted boron in silicon
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