Nano epitaxial growth of GaAs on Si (001)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3640226
Reference10 articles.
1. Benchmarking Nanotechnology for High-Performance and Low-Power Logic Transistor Applications
2. Stresses and strains in epilayers, stripes and quantum structures of III - V compound semiconductors
3. Dislocation density reduction in heteroepitaxial III-V compound films on Si substrates for optical devices
4. Selective area metalorganic vapor-phase epitaxy of gallium arsenide on silicon
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1. Heteroepitaxial Growth of III-V Semiconductors on Silicon;Crystals;2020-12-21
2. Monolithic III/V integration on (001) Si substrate;Metalorganic Vapor Phase Epitaxy (MOVPE);2019-08-30
3. How to control defect formation in monolithic III/V hetero-epitaxy on (100) Si? A critical review on current approaches;Semiconductor Science and Technology;2018-08-17
4. Morphology of GaAs crystals heterogeneously integrated on nominal (001) Si by epitaxial lateral overgrowth on tunnel oxide via Ge nano-seeding;Thin Solid Films;2018-02
5. Selective Epitaxial Growth of GaAs on a Si (001) Surface Formed by an In Situ Bake in a Metal-Organic Chemical Vapor Deposition Reactor;Journal of Nanoscience and Nanotechnology;2017-05-01
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