Study of composition and critical-point broadening in InAs/Ga1−xInxSb superlattices using spectroscopic ellipsometry
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.118560
Reference15 articles.
1. Proposal for strained type II superlattice infrared detectors
2. Electrical and optical properties of infrared photodiodes using the InAs/Ga1−xInxSb superlattice in heterojunctions with GaSb
3. Midwave infrared stimulated emission from a GaInSb/InAs superlattice
4. Optical and structural investigations of intermixing reactions at the interfaces of InAs/AlSb and InAs/GaSb quantum wells grown by molecular-beam epitaxy
5. Study of strain and disorder of InxGa1−xP/(GaAs, graded GaP) (0.25≤x≤0.8) using spectroscopic ellipsometry and Raman spectroscopy
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