Nonvolatile data storage using mechanical force-induced polarization switching in ferroelectric polymer-Reference-Cited by-同舟云学术

Nonvolatile data storage using mechanical force-induced polarization switching in ferroelectric polymer

Published:2015-01-26 Issue:4 Volume:106 Page:042903
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chen Xin¹,Tang Xin¹,Chen Xiang-Zhong¹^ORCID,Chen Yu-Lei¹,Guo Xu²,Ge Hai-Xiong²,Shen Qun-Dong¹^ORCID

Affiliation:

1. Department of Polymer Science & Engineering and Key Laboratory of High Performance Polymer Materials & Technology of MOE, School of Chemistry & Chemical Engineering, Nanjing University, Nanjing 210093, China

2. National Laboratory of Solid State Microstructures and Department of Materials Science & Engineering, Nanjing University, Nanjing 210093, China

Funder

Fundamental Research Funds for the Central University

Program for Changjiang Scholars and Innovative Research Team in University

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4906859

Reference21 articles.

1. Ferroelectric Memories

2. Applications of Modern Ferroelectrics

3. Organic ferroelectrics

4. High-performance solution-processed polymer ferroelectric field-effect transistors

5. Patterning and switching of nanosize ferroelectric memory cells

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