Energy levels and charge state control of the carbon antisite-vacancy defect in 4H-SiC
Author:
Affiliation:
1. Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping, Sweden
2. National Institutes for Quantum and Radiological Science and Technology, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan
Funder
Knut och Alice Wallenbergs Stiftelse
Energimyndigheten
Japan Society for the Promotion of Science
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5098070
Reference30 articles.
1. Room temperature coherent control of defect spin qubits in silicon carbide
2. Silicon vacancy in SiC as a promising quantum system for single-defect and single-photon spectroscopy
3. Resonant Addressing and Manipulation of Silicon Vacancy Qubits in Silicon Carbide
4. Room Temperature Coherent Spin Alignment of Silicon Vacancies in4H- and6H-SiC
5. A silicon carbide room-temperature single-photon source
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