Quantitative analysis of excitonic photoluminescence in nitrogen-doped ZnSe epilayers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.369323
Reference19 articles.
1. p‐type ZnSe by nitrogen atom beam doping during molecular beam epitaxial growth
2. Characteristics of p-type ZnSe Layers Grown by Molecular Beam Epitaxy with Radical Doping
3. Blue‐green laser diodes
4. Blue‐green injection laser diodes in (Zn,Cd)Se/ZnSe quantum wells
5. An optical method for evaluation of the net acceptor concentration inp‐type ZnSe
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