High‐field electron capture and emission in nitrided oxides
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.334392
Reference7 articles.
1. A JMOS transistor fabricated with 100-Å low-pressure nitrided-oxide gate dielectric
2. Megarad-Resistant 10nm Gate Dielectrics
3. Radiation effects in nitrided oxides
4. Thermal nitridation of silicon dioxide films
5. Effects of Ammonia Anneal on Electron Trappings in Silicon Dioxide
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