Determination of hole g-factor in InAs/InGaAs/InAlAs quantum wells by magneto-photoluminescence studies
Author:
Affiliation:
1. Physics Department, University of Regensburg, 93040 Regensburg, Germany
2. Ioffe Institute, 194021 St. Petersburg, Russia
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4975353
Reference38 articles.
1. High-quality InxGa1−xAs/InAlAs modulation-doped heterostructures grown lattice-mismatched on GaAs substrates
2. Photoluminescence of virtual‐surfactant grown InAs/Al0.48In0.52As single quantum wells
3. Magneto-photoluminescence of InAs/InGaAs/InAlAs quantum well structures
4. Transport properties of modulation-doped InAs-inserted-channel In0.75Al0.25As/In0.75Ga0.25As structures grown on GaAs substrates
5. Growth of shallow InAs HEMTs with metamorphic buffer
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1. Detecting Induced p±ip Pairing at the Al-InAs Interface with a Quantum Microwave Circuit;Physical Review Letters;2022-03-11
2. Transverse magnetic routing of light emission in hybrid plasmonic-semiconductor nanostructures: Towards operation at room temperature;Physical Review Research;2022-01-28
3. Perspective on advances in InAsSb type II superlattices grown on virtual substrates;Applied Physics Letters;2020-12-21
4. Asymmetric g Tensor in Low-Symmetry Two-Dimensional Hole Systems;Physical Review X;2018-06-18
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