Effects of p-doping and nonradiative processes on the current–voltage characteristics of long wavelength quantum-well laser diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.368694
Reference13 articles.
1. Electrical characterization of heterostructure lasers
2. Electrical derivative characteristics of InGaAsP buried heterostructure lasers
3. Current–voltage characteristics of long wavelength quantum-well laser diodes
4. Measurement of spontaneous emission efficiency and nonradiative recombinations in 1.58‐μm wavelength GaInAsP/InP crystals
5. Measurement of radiative and nonradiative recombination rates in InGaAsP and AlGaAs light sources
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2. AlGaAsSb/AlGaInAs type-II superlattices for tuning regions in tunable laser diodes;SPIE Proceedings;2004-09-01
3. Optical and electrical low-frequency noise of ridge waveguide InGaAsP/InP MQW lasers;Optical Organic and Inorganic Materials;2001-04-10
4. Study of gain compression mechanisms in multiple-quantum-well In/sub 1-x/Ga/sub x/As semiconductor optical amplifiers;IEEE Journal of Quantum Electronics;1999
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