Operations of hydrogenated diamond metal–oxide–semiconductor field-effect transistors after annealing at 500 °C
Author:
Funder
JSPS KAKENHI
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://iopscience.iop.org/article/10.1088/1361-6463/ab1e31/pdf
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