Formation of misfit dislocations in GaAs/InGaAs multiquantum wells observed by photoluminescence microscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1496121
Reference21 articles.
1. High‐speed InGaAs/GaAs strained multiple quantum well lasers with low damping
2. Quantum‐well infrared photodetectors
3. SNOM-induced photoluminescence of individual InGaAs quantum dots using etched metal-coated fibre tips
4. Room-temperature photoluminescence spectroscopy of self-assembled In0.5Ga0.5As single quantum dots by using highly sensitive near-field scanning optical microscope
5. Optical characterization of InGaAs‐InAlAs strained‐layer superlattices grown by molecular beam epitaxy
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