Performance characteristics of InGaAs/GaAs and GaAs/InGaAlAs coherently strained superlattice photodiodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98720
Reference9 articles.
1. Impact ionisation in multilayered heterojunction structures
2. Enhancement of electron impact ionization in a superlattice: A new avalanche photodiode with a large ionization rate ratio
3. Electron and hole impact ionization coefficients in GaAs‐AlxGa1−xAs superlattices
4. Staircase solid-state photomultipliers and avalanche photodiodes with enhanced ionization rates ratio
5. Excess noise design of InP/GaInAsP/GaInAs avalanche photodiodes
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1. Comparison of heterostructure-emitter bipolar transistors (HEBTs) with InGaAs/GaAs superlattice and quantum-well base structures;Solid-State Electronics;2008-07
2. InGaAs/GaAs multiple-quantum-well modulators and switches;Optical and Quantum Electronics;1993-12
3. Barrier width dependence of leakage currents in InGaAs/ GaAs multiple quantum well P-I-N diodes;Journal of Electronic Materials;1991-04
4. Misfit dislocations in pseudomorphic In0.23Ga0.77As/GaAs quantum wells: Influence on lifetime and diffusion of excess excitons;Journal of Applied Physics;1989-09
5. Orientation‐dependent phase modulation in InGaAs/GaAs multiquantum well waveguides;Applied Physics Letters;1988-11-28
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