Effect of collector‐base valence‐band discontinuity on Kirk effect in double‐heterojunction bipolar transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106115
Reference5 articles.
1. Heterostructure bipolar transistors and integrated circuits
2. A new effect at high currents in heterostructure bipolar transistors
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4. Velocity saturation in the collector of Si/Ge/sub x/Si/sub 1-x//Si HBT's
5. A theory of transistor cutoff frequency (fT) falloff at high current densities
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1. Study of Switching and Kirk Effects in InAlAs/InGaAs/InAlAs Double Heterojunction Bipolar Transistors;JSTS:Journal of Semiconductor Technology and Science;2013-10-31
2. Kirk effect mechanism in type-II InP∕GaAsSb double heterojunction bipolar transistors;Journal of Applied Physics;2007-09-15
3. RF power characteristics of SiGe HBTs at cryogenic temperatures;IEEE Transactions on Electron Devices;2006-06
4. Improved VBIC model for SiGe HBTs with an unified model of heterojunction barrier effects;IEEE Transactions on Electron Devices;2006-04
5. Two-dimensional DC simulation methodology for InP/GaAs0.51Sb0.49/InP heterojunction bipolar transistor;Solid-State Electronics;2005-06
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