Molecular dynamics simulations of silicon carbide nanowires under single-ion irradiation
Author:
Affiliation:
1. Applied Mechanics Laboratory, Department of Engineering Mechanics and Center for Nano and Micro Mechanics, Tsinghua University, Beijing 100084, China
Funder
National Natural Science Foundation of China
Science Challenge Project
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5121873
Reference49 articles.
1. Thermal conductivity of graphene with defects induced by electron beam irradiation
2. Defects as a factor limiting carrier mobility in WSe2: A spectroscopic investigation
3. Ab initioSimulation of Helium-Ion Microscopy Images: The Case of Suspended Graphene
4. Doping of Graphene by Low-Energy Ion Beam Implantation: Structural, Electronic, and Transport Properties
5. Nanowire photonics
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1. Physics of molecular deformation mechanism in 6H-SiC;Modelling and Simulation in Materials Science and Engineering;2023-03-10
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