Growth and structural properties of epitaxial GaxIn1−xP on InP
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.351206
Reference32 articles.
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1. Optical phonon modes and polaron related parameters in Ga x In 1−x P;Physica B: Condensed Matter;2018-02
2. Electronic properties of Ga In1−P ternary alloy from first-principles;Computational Materials Science;2016-07
3. Refractive index and dielectric constants of Ga In1−P: Disorder effect;Optik;2014-11
4. Photoluminescence in GaAs and In0.7Ga0.3P single layers on InP;Solid State Communications;2000-06
5. Low-pressure organometallic vapor phase epitaxy of coherent InGaAsP/InP and InGaAsP/InAsP multilayers on InP(001);Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1998-03
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