Improved stability of hydrogenated amorphous-silicon photosensitivity by ultraviolet illumination
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1518566
Reference16 articles.
1. Fermi-level dependence of the charge state of diffusing hydrogen in amorphous silicon
2. Reversible conductivity changes in discharge‐produced amorphous Si
3. Development in Understanding and Controlling the Staebler-Wronski Effect in a-Si:H
4. Direct measurement of the gap states and band tail absorption by constant photocurrent method in amorphous silicon
5. Effect of ultraviolet irradiation on the white light degraded electronic properties of hydrogenated amorphous silicon films
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1. Light-induced hydrogen evolution from hydrogenated amorphous silicon: Hydrogen diffusion by formation of bond centered hydrogen;Journal of Applied Physics;2014-02-21
2. Annealing Kinetic Model Using Fast and Slow Metastable Defects for Hydrogenated-Amorphous-Silicon-Based Solar Cells;Advances in OptoElectronics;2007-06-05
3. Characterization of Photoconductive Amorphous Si:H Films for Photoconducting Sensor Applications;Electrochemical and Solid-State Letters;2007
4. Modeling of annealing kinetics for hydrogenated-amorphous-silicon-based solar cells using two-component metastable defects;Applied Physics Letters;2006-06-12
5. In situ ultraviolet treatment in an Ar ambient upon p-type hydrogenated amorphous silicon–carbide windows of hydrogenated amorphous silicon based solar cells;Applied Physics Letters;2004-06-28
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