Silicon oxynitride films: Ion bombardment effects, depth profiles, and ionic polarization, studied with the aid of the Auger parameter
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.341237
Reference41 articles.
1. Deposition and composition of silicon oxynitride films
2. Thermal nitridation of silicon dioxide films
3. Silicon oxynitride films prepared by plasma nitridation of silicon and their application for tunnel metal‐insulator‐silicon diodes
4. Surface silicon oxynitride films obtained by implanting mixtures of oxygen and nitrogen ions into silicon
5. Fine structure of Si LVV and N KLL Auger signals for thermally nitrided SiO2 films
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2. On the electronic nature of silicon and germanium based oxynitrides and their related mechanical, optical and vibrational properties as obtained from DFT and DFPT;Computational Materials Science;2012-02
3. Electrodeposition of Si Thin Film in a Hydrophobic Room-Temperature Molten Salt;Electrochemical and Solid-State Letters;2008
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