Identification of sub-band-gap absorption features at the HfO2∕Si(100) interface via spectroscopic ellipsometry
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2769389
Reference5 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. The effect of interfacial layer properties on the performance of Hf-based gate stack devices
3. Observation of bulk HfO2 defects by spectroscopic ellipsometry
4. High permittivity quaternary metal (HfTaTiOx) oxide layer as an alternative high-κ gate dielectric
5. The role of nitrogen-related defects in high-k dielectric oxides: Density-functional studies
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