Author:
Dastgheib-Shirazi Amir,Hahn Giso,Terheiden Barbara
Reference6 articles.
1. A. Dastgheib-Shirazi, M. Steyer, G. Micard, H. Wagner, P. Altermatt, and G. Hahn, “Effects of process conditions for the n+-emitter formation in crystalline silicon,” in Proc. 38th IEEE PVSC (2012), pp. 1584–1589.
2. Relationships between Diffusion Parameters and Phosphorus Precipitation during the POCl3 Diffusion Process
3. Limitation of Industrial Phosphorus-diffused Emitters by SRH Recombination
4. Optimizing phosphorus diffusion for photovoltaic applications: Peak doping, inactive phosphorus, gettering, and contact formation
5. D. Kane and R. Swanson, “Measurement of the emitter saturation current by a contactless photoconductivity decay method,” in Proc. 18th IEEE PVSC (1985), pp. 578–583.