Optimizing phosphorus diffusion for photovoltaic applications: Peak doping, inactive phosphorus, gettering, and contact formation

Author:

Wagner Hannes1,Dastgheib-Shirazi Amir2ORCID,Min Byungsul3,Morishige Ashley E.1ORCID,Steyer Michael2,Hahn Giso2,del Cañizo Carlos14ORCID,Buonassisi Tonio1,Altermatt Pietro P.5

Affiliation:

1. Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA

2. Department of Physics, University of Konstanz, 78457 Konstanz, Germany

3. Institute for Solar Energy Research Hamelin (ISFH), 31860 Emmerthal, Germany

4. Instituto de Energía Solar, Universidad Politécnica de Madrid, 28040 Madrid, Spain

5. Department of Solar Energy, Institute of Solid-State Physics, University of Hannover, 30167 Hannover, Germany

Funder

National Science Foundation (NSF)

U.S. Department of Energy (DOE)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference75 articles.

1. P. Pichler , Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon ( Springer Science and Business Media, 2012).

2. Dopant and carrier concentration in Si in equilibrium with monoclinic SiP precipitates

3. B. Giessen and R. Vogel , Z. Metallk. 50, 274 (1959).

4. Kinetics of Phosphorus Predeposition in Silicon Using POCl3

5. Precipitation as the phenomenon responsible for the electrically inactive phosphorus in silicon

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