Precipitation as the phenomenon responsible for the electrically inactive phosphorus in silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.330646
Reference24 articles.
1. Detailed analysis of thin phosphorus-diffused layers in p-type silicon
2. Carrier Profile Change for Phosphorus‐Diffused Layers on Low‐Temperature Heat Treatment
3. Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Si-ECenter
4. Ion‐Implanted Gallium‐Arsenide‐Phosphide Surfaces
5. Ion‐Implanted Gallium‐Arsenide‐Phosphide Surfaces
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