Dislocation annihilation in regrown GaN on nanoporous GaN template with optimization of buffer layer growth
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2437056
Reference15 articles.
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4. Ultraviolet photoenhanced wet etching of GaN in K2S2O8 solution
5. Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy
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