Ge L3-edge x-ray absorption near-edge structure study of structural changes accompanying conductivity drift in the amorphous phase of Ge2Sb2Te5-Reference-Cited by-同舟云学术

Ge L3-edge x-ray absorption near-edge structure study of structural changes accompanying conductivity drift in the amorphous phase of Ge2Sb2Te5

Published:2014-05-07 Issue:17 Volume:115 Page:173501
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Mitrofanov K. V.,Kolobov A. V.,Fons P.,Wang X.,Tominaga J.,Tamenori Y.,Uruga T.,Ciocchini N.,Ielmini D.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4874415

Reference25 articles.

1. D. Ielmini, in Nonvolatile Memories: Materials, Devices and Applications, edited by T.Y. Tseng and S. M. Sze (American Scientific Publishers, 2012), Vol. 2, pp. 1–27.

2. Low-field amorphous state resistance and threshold voltage drift in chalcogenide materials

3. Recovery and Drift Dynamics of Resistance and Threshold Voltages in Phase-Change Memories

4. Local instability ofp-type bonding makes amorphous GeTe a lone-pair semiconductor

5. Coexistence of tetrahedral- and octahedral-like sites in amorphous phase change materials

Cited by 34 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nonvolatile Memristive Materials and Physical Modeling for In‐Memory and In‐Sensor Computing;Small Science;2024-01-22

2. Challenges associated with phase-change material selection;Phase Change Materials-Based Photonic Computing;2024

3. Non-volatile tunable optics by design: From chalcogenide phase-change materials to device structures;Materials Today;2023-09

4. An experimental study of Ge diffusion through Ge2Sb2Te5;Materials Science in Semiconductor Processing;2022-12

5. X-ray absorption spectromicroscopy gives access to Li1+xAlxGe2−x(PO4)3 (LAGP) local degradation at the anode-electrolyte interface;Journal of Power Sources Advances;2022-11