Conductance quantization in nanoscale vertical structure silicon field-effect transistors with a wrap gate
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126517
Reference12 articles.
1. Quantum conductance of point contacts in Si inversion layers
2. Ballistic electron transport through a quantum point contact defined in a Si/Si0.7Ge0.3heterostructure
3. Periodic conductance fluctuations in quasi-one-dimensional metal-oxide-semiconductor field-effect transistors with shallow-trench isolations
4. Crystallographic orientation of silicon on an amorphous substrate using an artificial surface‐relief grating and laser crystallization
5. One-dimensional transport and the quantisation of the ballistic resistance
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3. Impurity scattering effects on transport through gate-all-around Si nanowires;Physica E: Low-dimensional Systems and Nanostructures;2008-03
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