Scandium doped Ge2Sb2Te5 for high-speed and low-power-consumption phase change memory-Reference-Cited by-同舟云学术

Scandium doped Ge2Sb2Te5 for high-speed and low-power-consumption phase change memory

Published:2018-03-26 Issue:13 Volume:112 Page:133104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wang Yong¹²,Zheng Yonghui¹²,Liu Guangyu¹²,Li Tao¹²,Guo Tianqi¹²,Cheng Yan¹,Lv Shilong¹,Song Sannian¹,Ren Kun¹³^ORCID,Song Zhitang¹

Affiliation:

1. State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

2. University of Chinese Academy of Sciences, Beijing 100049, China

3. Hangzhou Dianzi University, College of Materials and Environmental Engineering, Hangzhou 310018, Zhejiang, China

Funder

National Key Research and Development Program of China

Science of Technology Council of Shanghai

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5012872

Reference22 articles.

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4. L. Perniola , G. Molas , G. Navarro , E. Nowak , V. Soua , E. Vianello , and B. Salvo , in International Memory Workshop (IMW) (2016), pp. 1–3.

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