Hexagonal-to-cubic phase transformation in GaN nanowires by Ga+ implantation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1760593
Reference15 articles.
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3. Growth by molecular beam epitaxy and electrical characterization of Si‐doped zinc blende GaN films deposited on β‐SiC coated (001) Si substrates
4. High p‐type conductivity in cubic GaN/GaAs(113)A by using Be as the acceptor and O as the codopant
5. Optical gain of strained hexagonal and cubic GaN quantum‐well lasers
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