Growth by molecular beam epitaxy and electrical characterization of Si‐doped zinc blende GaN films deposited on β‐SiC coated (001) Si substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.113085
Reference8 articles.
1. Progress and prospects for GaN and the III–V nitride semiconductors
2. Growth of Si-doped AlxGa1–xN on (0001) sapphire substrate by metalorganic vapor phase epitaxy
3. Si- and Ge-Doped GaN Films Grown with GaN Buffer Layers
4. Growth of zinc blende‐GaN on β‐SiC coated (001) Si by molecular beam epitaxy using a radio frequency plasma discharge, nitrogen free‐radical source
5. An investigation of the properties of cubic GaN grown on GaAs by plasma-assisted molecular-beam epitaxy
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