Structural and Electronic Properties of Hexagonal and Cubic Phase AlGaInN Alloys Investigated Using First Principles Calculations
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-019-43113-w.pdf
Reference38 articles.
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3. Auf der Maur, M., Pecchia, A., Penazzi, G., Rodrigues, W. & DiCarlo, A. Efficiency Drop in Green InGaN/GaN Light Light Emitting Diodes: The Role of Random Alloy Fluctuations. Phys. Rev. Lett. 116, 027401 (2016).
4. Kim, J. G., Frenkel, A. C., Liu, H. & Park, R. M. Growth by molecular beam epitaxy and electrical characterization of Si‐doped zinc blende GaN films deposited on β‐SiC coated (001) Si substrates. Appl. Phys. Lett. 65, 91–93 (1994).
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