Characterization of InGaN quantum wells with gross fluctuations in width
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2751401
Reference23 articles.
1. Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition
2. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes
3. Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm
4. Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells
5. Electron-beam-induced strain within InGaN quantum wells: False indium “cluster” detection in the transmission electron microscope
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1. Directly correlated microscopy of trench defects in InGaN quantum wells;Ultramicroscopy;2021-12
2. Cathodoluminescence as an effective probe of carrier transport and deep level defects in droop-mitigating InGaN/GaN quantum well heterostructures;Applied Physics Express;2019-02-15
3. Direct observation of spatial distribution of carrier localization sites in ultrathin GaN/AlN quantum wells by spreading resistance microscopy;Applied Physics Letters;2019-02-11
4. InGaN nanocolumn growth self-induced by in-situ annealing and ion irradiation during growth process with molecular beam epitaxy method;Applied Surface Science;2017-11
5. Ultra-low threshold gallium nitride photonic crystal nanobeam laser;Applied Physics Letters;2015-06-08
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