Direct observation of spatial distribution of carrier localization sites in ultrathin GaN/AlN quantum wells by spreading resistance microscopy
Author:
Affiliation:
1. P.N. Lebedev Physical Institute of RAS, 119991 Moscow, Russia
2. Ioffe Institute, 194021 St. Petersburg, Russia
3. Notre Dame Integrated Imaging Facility, University of Notre Dame, Notre Dame, Indiana 46556, USA
Funder
RFBR-BRICS
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5078751
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3. 231–261nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire
4. AlGaN Deep-Ultraviolet Light-Emitting Diodes
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