Polarized edge-incident photovoltage spectroscopy and reflectance characterization of a GaAs/GaAlAs vertical-cavity surface-emitting laser structure
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1445463
Reference13 articles.
1. Surface emitting semiconductor lasers
2. VCSE laser transmitters for parallel data links
3. Microstructured semiconductor lasers for high-speed information processing
4. Non-Destructive Characterization of InGaAsP/InP Distributed Bragg Reflectors and Regrown Optical Cavity Layers for InP-Based Vertical-Cavity Surface-Emitting Lasers
5. Growth of high-quality GaAs/AlAs Bragg mirrors on patterned InP-based quantum well mesa structures
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Polarization response of quantum-confined structures using edge-photovoltage spectroscopy;Semiconductor Science and Technology;2007-11-07
2. Non-destructive, room temperature characterization of wafer-sized III-V semiconductor device structures using contactless electromodulation and wavelength-modulated surface photovoltage spectroscopy;physica status solidi (a);2005-05
3. Differential surface photovoltage spectroscopy characterization of a 1.3 μm InGaAlAs/InP vertical-cavity surface-emitting laser structure;Journal of Applied Physics;2003-02-15
4. Surface photovoltage spectroscopy as a valuable nondestructive characterization technique for GaAs/GaAlAs vertical-cavity surface-emitting laser structures;Journal of Physics: Condensed Matter;2002-12-18
5. Angle-dependent differential-photovoltage spectroscopy for the characterization of a GaAs/GaAlAs based vertical-cavity surface-emitting laser structure;Journal of Applied Physics;2002-09
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