Using six moments of Boltzmann’s transport equation for device simulation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1389757
Reference21 articles.
1. Diffusion of Hot and Cold Electrons in Semiconductor Barriers
2. Transport equations for electrons in two-valley semiconductors
3. An investigation of steady-state velocity overshoot in silicon
4. Impact ionization within the hydrodynamic approach to semiconductor transport
5. Investigation of the impact ionization in the hydrodynamic model
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