Reduced lattice temperature high‐speed operation of pseudomorphic InGaAs/GaAs field‐effect transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106032
Reference9 articles.
1. Cryogenic vacuum high frequency probe station
2. Characteristics of GaAs/AlGaAs-doped channel MISFET's at cryogenic temperatures
3. Frequency response of sub-micrometre pseudomorphic AlGaAs/InGaAs/GaAs MODFETs at cryogenic temperatures
4. Characterization of ion‐implanted InxGa1−xAs/GaAs 0.25 μm gate metal semiconductor field‐effect transistors withFt≳100 GHz
5. Does the two‐dimensional electron gas effect contribute to high‐frequency and high‐speed performance of field‐effect transistors?
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Temperature dependent study of the microwave performance of 0.25-μm gate GaAs MESFETs and GaAs pseudomorphic HEMTs;IEEE Transactions on Electron Devices;1996-06
2. Noise and gain comparison of 0.25 μm gate MESFETs and PHEMTs for low power wireless communication circuits;Solid-State Electronics;1996-04
3. Temperature dependence study of two-dimensional electron gas effect on the noise performance of high frequency field effect transistors;IEEE Electron Device Letters;1995-04
4. Comparison of 80-200 nm gate length Al/sub 0.25/GaAs/GaAs/(GaAs:AlAs), Al/sub 0.3/GaAs/In/sub 0.15/GaAs/GaAs, and In/sub 0.52/AlAs/In/sub 0.65/GaAs/InP HEMTs;IEEE Transactions on Electron Devices;1995
5. Cryogenic behavior of Ultrashort gate AlGaAs/GaAs and pseudomorphic AlGaAs/InGaAs/GaAs HEMT's;Microelectronic Engineering;1992-09
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