Bias-dependent tunneling anisotropic magnetoresistance in antiferromagnetic Pd-doped FeRh-based junctions-Reference-Cited by-同舟云学术

Bias-dependent tunneling anisotropic magnetoresistance in antiferromagnetic Pd-doped FeRh-based junctions

Published:2021-12-13 Issue:24 Volume:119 Page:242401
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Han L.¹^ORCID,Chen X. Z.¹,Li X. L.²,Zhang J.²^ORCID,Feng J. F.³,Li F.¹,Song C.¹^ORCID,Pan F.¹^ORCID

Affiliation:

1. Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China

2. School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, China

3. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China

Funder

National Natural Science Foundation of China

Natural Science Foundation of Beijing Municipality

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0072150

Reference38 articles.

1. Large magnetoresistance effect in 82Ni-Fe/Al-Al2O3/Co magnetic tunneling junction

2. Large Magnetoresistance at Room Temperature in Ferromagnetic Thin Film Tunnel Junctions

3. Role of Metal-Oxide Interface in Determining the Spin Polarization of Magnetic Tunnel Junctions

4. Controlling oxygen distribution of an MgAl2O4 barrier for magnetic tunnel junctions by two-step process

5. 70% TMR at Room Temperature for SDT Sandwich Junctions With CoFeB as Free and Reference Layers

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