Role of Metal-Oxide Interface in Determining the Spin Polarization of Magnetic Tunnel Junctions
Author:
Affiliation:
1. Unité Mixte de Physique, CNRS–Thomson CSF, Laboratoire Central de Recherche, Domaine de Corbeville, 91404 Orsay, France, and Université Paris-Sud, 91405 Orsay, France.
Abstract
Publisher
American Association for the Advancement of Science (AAAS)
Subject
Multidisciplinary
Reference17 articles.
1. Large Magnetoresistance at Room Temperature in Ferromagnetic Thin Film Tunnel Junctions
2. Switching with Hot Spins
3. Inversion of Spin Polarization and Tunneling Magnetoresistance in Spin-Dependent Tunneling Junctions
4. J. M. De Teresa et al. ibid. p. 4288.
5. Tedrow P. M., Meservey R., Phys. Rev. B 7, 318 (1973);
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