Multiple ink-jet printed zinc tin oxide layers with improved TFT performance
Author:
Affiliation:
1. Material Science Department, Technische Universität Darmstadt, Darmstadt 64287, Germany
2. Institute of Nanotechnology and Karlsruhe Nano Micro Facility (KNMF), Karlsruhe Institute of Technology, Eggenstein-Leopoldshafen 76344, Germany
Funder
Helmholtz-Gemeinschaft (Helmholtz Association)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4958701
Reference25 articles.
1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
2. An amorphous oxide semiconductor thin-film transistor route to oxide electronics
3. Band transport and mobility edge in amorphous solution-processed zinc tin oxide thin-film transistors
4. Growth and characterization of radio frequency magnetron sputter-deposited zinc stannate, Zn2SnO4, thin films
5. High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer
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