Minority‐carrier diffusion‐length measurement and lifetime in Pb0.8Sn0.2Te and indium‐doped PbTe liquid phase epitaxy layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.332364
Reference23 articles.
1. Recent advances in lead-chalcogenide diode lasers
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4. Life time measurements in PbTe and PbSnTe
5. Recombination in Pb0.83Sn0.17Te at high levels of optical excitation
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2. Epitaxial lead-chalcogenide on silicon layers for thermal imaging applications;SPIE Proceedings;1999-11-04
3. Infrared p-n-junction diodes in epitaxial narrow gap PbTe layers on Si substrates;Journal of Applied Physics;1999-03-15
4. Diffusion length and lifetime in highly Ga‐doped PbSnTe layers grown by liquid‐phase epitaxy;Journal of Applied Physics;1989-09-15
5. Properties of liquid‐phase epitaxy grown Pb1−xSnxTe homostructure diode lasers with Ga‐doped cladding layer;Journal of Applied Physics;1988-11
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