Interstitial nitrogen induced by low-energy ion beam nitridation of AIII–BV semiconductor surfaces
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1415765
Reference20 articles.
1. Synchrotron radiation photoemission spectroscopy studies of the thermal nitridation of GaAs(100) with ammonia
2. Near edge x-ray absorption fine structure characterization of polycrystalline GaN grown by nitridation of GaAs (001)
3. III–V surface plasma nitridation: A challenge for III–V nitride epigrowth
4. Nitridation of the GaAs (001) surface using atomic nitrogen
5. Formation of an Sb–N compound during nitridation of InSb (001) substrates using atomic nitrogen
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