Terahertz intersubband absorption in non-polar m-plane AlGaN/GaN quantum wells-Reference-Cited by-同舟云学术

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Terahertz intersubband absorption in non-polar m-plane AlGaN/GaN quantum wells

Published:2014-07-14 Issue:2 Volume:105 Page:021109
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Edmunds C.¹,Shao J.¹²,Shirazi-HD M.²³,Manfra M. J.¹²³⁴,Malis O.¹

Affiliation:

1. Physics Department, Purdue University, West Lafayette, Indiana 47907, USA

2. Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USA

3. School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, USA

4. School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, USA

Funder

Division of Materials Research (DMR)

Directorate for Engineering (ENG)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4890611

Reference25 articles.

1. Terahertz semiconductor-heterostructure laser

2. Operation of terahertz quantum-cascade lasers at 164 K in pulsed mode and at 117 K in continuous-wave mode

3. Terahertz quantum cascade lasers with double-resonant-phonon depopulation

4. Quantum cascade lasers operating from 1.2to1.6THz

5. Terahertz quantum-cascade lasers based on a three-well active module

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3. Photoluminescence Study of Carrier Localization and Recombination in Nearly Strain‐Balanced Nonpolar InGaN/AlGaN Quantum Wells;physica status solidi (b);2022-03-06

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