Band structures of GaAs, InAs, and Ge: A 24-k.p model
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1614424
Reference20 articles.
1. Pseudopotential-based multibandk⋅pmethod for∼250 000-atom nanostructure systems
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3. Electron charge densities at conduction-band edges of semiconductors
4. Theory of dielectric-function anisotropies of (001) GaAs (2×1) surfaces
5. Empiricalspds*tight-binding calculation for cubic semiconductors: General method and material parameters
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