Interface width of anodic native oxide—InSb structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97477
Reference12 articles.
1. Interface depth resolution of Auger sputter profiled Ni/Cr interfaces: Dependence on ion bombardment parameters
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3. Roughness contributions to resolution in ion sputter depth profiles of polycrystalline metal films
4. Interface characterization of InSb MOS structures
5. Oxide and interface properties of plasma-grown and wet anodic oxides of InSb metal/oxide/semiconductor devices
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1. Electrochemical behavior of InSb thin films with different crystal structure in alkaline solution;Electrochimica Acta;2019-04
2. Surface reactivity of InSb studied by cyclic voltammetry coupled to XPS;Journal de Physique IV (Proceedings);2006-03
3. A model of the small-signal charge DLTS response of traps distributed in both energy and space;Physica Status Solidi (a);1991-09-16
4. Correlation between electrical and compositional properties of SiO2‐InSb interfaces;Journal of Applied Physics;1988-01-15
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