Band structure engineering of superlattice-based short-, mid-, and long-wavelength infrared avalanche photodiodes for improved impact ionization rates-Reference-Cited by-同舟云学术

Band structure engineering of superlattice-based short-, mid-, and long-wavelength infrared avalanche photodiodes for improved impact ionization rates

Published:2002-10 Issue:7 Volume:92 Page:3771-3777
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

El-Rub K. Abu,Grein C. H.,Flatte M. E.,Ehrenreich H.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1503390

Reference16 articles.

1. Multiplication noise in uniform avalanche diodes

2. The distribution of gains in uniformly multiplying avalanche photodiodes: Theory

3. Avalanche‐Photodiode Frequency Response

4. Impact ionization enhancements in AlxGa1−xSb avalanche photodiodes

5. Impact ionization enhancements in AlxGa1−xSb avalanche photodiodes

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