A comparative study of impact ionization and avalanche multiplication in InAs, HgCdTe, and InAlAs/InAsSb superlattice

Abstract

We use an ensemble Monte Carlo transport approach to calculate and compare the impact ionization and avalanche photodiode excess noise characteristics in three materials—a band-engineered InAlAs/InAsSb type-II superlattice, bulk InAs, and HgCdTe—all with an identical bandgap of 370 meV at 250 K. The electronic band structures and energy–momentum conservation conditions are used to calculate the impact ionization rates, carrier histories, multiplication gains, and excess noise characteristics. The calculated impact ionization coefficients and excess noise factors indicate a single carrier species multiplication in all three materials under low applied electric fields. We find the ratio of impact ionization coefficients to be k=7×10−4 for InAs and 3×10−4 for HgCdTe under an applied field of 50 kV/cm, and the superlattice to be k<10−6 at fields up to 400 kV/cm. The bulk materials experience avalanche breakdown as the applied field increases, transitioning to Geiger mode behavior at gains above 103 for InAs and 104 for HgCdTe. However, this breakdown is absent from the superlattice at the highest fields considered in this study due to hole confinement, indicating superior performance compared to the bulk materials. Our results demonstrate the role of superlattice band engineering in designing quality avalanche photodiode materials.