Zeeman spin-splitting in the (010) β-Ga2O3 two-dimensional electron gas-Reference-Cited by-同舟云学术

Zeeman spin-splitting in the (010) β-Ga2O3 two-dimensional electron gas

Published:2019-12-23 Issue:26 Volume:115 Page:262103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Neal Adam T.¹^ORCID,Zhang Yuewei²^ORCID,Elhamri Said¹³,Rajan Siddharth²,Mou Shin¹^ORCID

Affiliation:

1. Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright Patterson AFB, Ohio 45433, USA

2. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA

3. Department of Physics, University of Dayton, Dayton, Ohio 45469, USA

Funder

Air Force Office of Scientific Research

Air Force Research Laboratory

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5131736

Reference18 articles.

1. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

2. Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics

3. 3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga2O3MOSFETs

4. W. Li , Z. Hu , K. Nomoto , R. Jinno , Z. Zhang , T. Q. Tu , K. Sasaki , A. Kuramata , D. Jena , and H. G. Xing , in IEEE International Electron Devices Meeting (IEDM), San Francisco, CA (2018), pp. 8.5.1–8.5.4.

5. Guest Editorial: The dawn of gallium oxide microelectronics

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