Lu2O3: A promising ultrawide bandgap semiconductor for deep UV photodetector
Author:
Affiliation:
1. State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials, Sun Yat-sen University, Guangzhou 510275, People's Republic of China
Funder
National Natural Science Foundation of China
Guangdong Basic and Applied Basic Research Foundation
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0048752
Reference27 articles.
1. Vacuum-Ultraviolet Photon Detections
2. Ultrahigh EQE (15%) Solar‐Blind UV Photovoltaic Detector with Organic–Inorganic Heterojunction via Dual Built‐In Fields Enhanced Photogenerated Carrier Separation Efficiency Mechanism
3. Low-Dimensional Structure Vacuum-Ultraviolet-Sensitive (λ< 200 nm) Photodetector with Fast-Response Speed Based on High-Quality AlN Micro/Nanowire
4. Ultra-Low Dark Current AlGaN-Based Solar-Blind Metal–Semiconductor–Metal Photodetectors for High-Temperature Applications
5. AlGaN photonics: recent advances in materials and ultraviolet devices
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